Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm

Ge Wafer Specification

• Growing Method:            CZ
• Orientation:                    (100) +/- 1.0 Deg.
• Wafer Size:                    4" dia x  500 microns  
• Surface Polishing:          Two sides epi polished
• Surface roughness :     RMS or Ra:~ 10 A(By AFM)
• Doping:                          Undoped
• Conductor type:              N-type
• Resistivity:                    >50  Ohms-cm (If you would like to measure the resistivity accurately, 
                                      please order our Portable 4 Probe Resistivity Testing Instrument.)                   
• Package:                       under 1000 class clean room      

Typical Properties of Ge Crystal

• Structure:                       Cubic, a = 5.6754 A
• Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640