MTI | SKU:
GAUe50D08CNLECUS
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
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GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
MTI
- GaAs single crystal wafer
- Growing Method: LEC
- Orientation: (110)
- Size: 2" dia x 2.8 mm
- Polishing: As Cut
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: >1 x 107 Ohm.cm
- Mobility: 4500 cm 2/ V.S
- Carrire Concentration: <1 x108 cm^-3
- EPD: < 5x104/cm-2
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