MTI  |  SKU: IAZna101005S1

InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished

€148,35

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InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished

MTI

 

  • InAs wafer    
  • P Type, Zn doped
  • Size:                     10x10x0.5mm
  • Orientation:          <100> +/-0.50
  •  Polishing:             one-side polishd
  • Resistivities:        0.0084 ohm-cm
  • Packing:                 in 1000 class clean room with wafer container

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 SEMI                    
  • Doping                                                                Zn doped
  • Conductivity type                                               P type
  • Carrier Concentration                                       5.3E18/ cm3
  • Mobility                                                              126 cm2/V.S  
  • Resistivity                                                          0.0084 ohm-cm
  • EPD                                                                    1.2E4 / cm 2

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