Crystal Substrate A-Z

MTI

Two type Plastic gear set for SFM1 - MTI-SFM1-GEAR

MTI

Si Wafer (100) 2" dia x 0.3 mm, 2SP, FZ , Undoped, resistivities: > 10,000 ohm-cm

MTI

Ge Wafer (100) Undoped, 2" dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm - GEUa50D05C1R50US

MTI

1200C Max 6 Channel High Cleanliness Hydrogen Furnace for Hi-Throughput Annealing - GSL-1200X-MGI-6-H2

MTI

1.0M NaPF6 in EC:DMC:EMC=1:1:1 with 1.0%FEC as Electrolyte for Sodium-Ion Battery, 100g/bottle, SBE-EDE111FEC

MTI

Alpha-Fe2O3 Crystal (11-20) <0.4deg, Edge oriented ,5x5x0.5mm,1SP

MTI

Alpha-Fe2O3 Crystal (0001) <0.4deg, Edge oriented ,5x5x0.5mm,1SP

MTI

AlN Template on Sapphire(0001) 4"x 0.5mm, one sides polished ,AlN film: 1000nm - FmAlNonALc101D05C1FT1000US

MTI

AlN Template on Sapphire(0001) 2"x 0.5mm, two sides polished, AlN film: 1000nm

MTI

AlN Template on Sapphire(0001) 2"x 0.5mm, one sides polished, AlN film: 1000nm - FmAlNonALc50D05C1FT1000US

MTI

AlN Ceramic Substrate 2"x2"x0.254mm, as lapped, CmAlN50500254SN

MTI

AlN Template on Sapphire(0001) 4"x 0.5mm, one sides polished, AlN film: 5000nm - FmAlNonALc101D05C1FT5000US

MTI

AlN Template on Sapphire(0001) 2"x 0.5mm, one sides polished ,AlN film: 5000nm - FmAlNonALc50D05C1FT5000US5

MTI

AlN Template on 4" Silicon (Si <111>, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUS

MTI

AlN Ceramic Substrate 114.3mm x114.3mm x 0.5mm, as lapped on both sides - CmAlN11411405SN

MTI

AlN Ceramic Substrate 10x10x 0.5mm, 1SP - CmAlN101005S1

MTI

AlN Ceramic Substrate 1"x1"x 0.635mm, fine ground

MTI

AlN Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1

MTI

0.07% Fe doped LiNbO3 crystal, Z-cut, 10x10 x0.5 mm , 2sp

MTI

0.05% Fe doped LiNbO3 crystal, Z-cut, 5x5 x0.5 mm , 2sp