Ga Crystal Substrate

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GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp

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GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

MTI

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp

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GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp

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GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US

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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

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VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp

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VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

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VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp

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Ga2O3 - Beta, Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP - GaO101006C1ori201US5

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Ga2O3-Beta Single Crystal Substrate, <010>+/-1 degree ori, 10x10x0.35mm, 2SP, Research grade with "Twin"

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Ga2O3-Beta Single Crystal Substrate, <-201> ori, 5x5x0.6mm, 1SP

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Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP

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Ga2O3-beta Single Crystal Substrate, <010>+/-1 degree ori, 5 x 5 x 0.35mm, 2SP, Research grade with "Twin"