Smart Products Filter Index - Do not delete

MTI

Cu Metallic Substrate ( polycrystalline) 10x10x0.5mm, 1 side polished

MTI

Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

MTI

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

MTI

Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp

MTI

Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp

MTI

CsPbBr3 single crystal substrate (100 ) 10x10x0.5mm, 1sp

MTI

CsI Single crystal block 10x10x5.0 mm, fine ground - CSI101050SN

MTI

CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 2sp

MTI

CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1

MTI

Crystal Grower from Four Electrodes Arc Melting up to 3000C - EQ-SKJ-ARC

MTI

Crystal Grower By Vacuum Levitation Melting - EQ-SKJ-LCZ

MTI

Cryogenic Solenoid Valve, 24VDC, 1/4" Female NPT, Min Temp. -195 , EQ-CGSN-Valve-LD

MTI

Crucible Ceramic Fiber Heater: 8"I.D. x12" O.D. x 10"H with Cover, 1100C

MTI

CrO3 (99.5%, 30-50 nm) Nanopowder

MTI

CR2450 Button Cell Cases (24d x 5.0mm) with Seal O-rings for Battery Research - 100 pcs/pck-CR2450-CASE

MTI

CR2325 Button Cells Cases (23d x 2.5t mm) with Seal O-rings for Battery Research - 100 pcs/pck - CR2325-CASE-316

MTI

CR2016 Case with Two Sides Kapton Windows - 5 pairs/pkg-CR2016-Kapton-2s