MTI  |  SKU: IASna101005S1

InAs, (100), Sn doped, N-type, 10m-10m x10mm x 0.5mm 1sp - IASna101005S1

€113,85

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InAs, (100), Sn doped, N-type, 10m-10m x10mm x 0.5mm 1sp - IASna101005S1

MTI

  • Growth method LEC
  • Orientation (100)± 0.5 Deg
  • Orientation FlatN/A
  • DopingSn doped
  • Conductivity typeN type
  • Carrier Concentration (3-10)E17cm3
  • Mobility >11000 cm2/V.S
  • EPD <15000 / cm 2
  • Standard thickness 500 ±20 mm
  • Size  10x10 mm
  • Polishone-side



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