MTI  |  SKU: IAUa50D05C1US

InAs (100), Undoped 2" dia x 0.5mm, one side polished

€849,85

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InAs (100), Undoped 2" dia x 0.5mm, one side polished

MTI

 

2" InAs wafer (Ntype)

  • 2" InAs wafer     (Undoped, N type)
  • Size:                     2" dia x 500 micron +/-25 microns
  • Orientation:          <100> +/-0.50
  •  Polishing:             one-side polishd
  • Packing:                 in 1000 class clean room with wafer container

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o                                                     
  • Doping                                                                undoped
  • Conductivity type                                               N type
  • Carrier Concentration                                     (1-3.0) x10^16/ cm3
  • Mobility                                                            ~20000 cm 2/Vs
  • Resistivity                                                   >=1.0x10^-4 ohm.cm
  • EPD                                                            <10000  / cm 2 

 

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