In Crystal Substrate

MTI

InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished

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InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US

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InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp

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InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1sp

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InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp

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InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US

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InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating

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InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp

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InP-VGF Grown (111)A undoped, 2"x0.35 mm wafer, 1sp

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InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US

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InP-VGF Grown (111)B Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating

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VGF -InP (100) undoped 5x5x0.35mm,1sp

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VGF InP (100) Fe doped, 2"x0.35 mm wafer, 1sp - IPFea50D035C1US

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VGF InP (100) undoped, 2" x 0.35 mm wafer, 1sp - IPUa50D035C1US

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VGF InP (110) Fe doped, 2"x0.5 mm wafer, 2sp

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VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp

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VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US

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VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp