mti

MTI

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm

MTI

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R:10-15Ohm.cm

MTI

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm

MTI

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005ohm.cm

MTI

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm

MTI

Ge Substrate: (100) 10x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm

MTI

Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm

MTI

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm

MTI

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm

MTI

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm

MTI

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005 ohm.cm

MTI

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm

MTI

Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

MTI

Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

MTI

Ge Substrate: (100)+/- 2 degree, 10x5 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

MTI

Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm

MTI

Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm

MTI

Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

MTI

Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm

MTI

Ge Wafer (100) +/-0.7 Degree 2" dia x 0.45 mm, 1SP, N type ( Sb doped), R:>40 ohm-cm