mti

MTI

FZ Si Wafer (100), 2" dia x 0.3 mm, 1SP, P type, B doped R>1000 ohm-cm

MTI

FZ Si Wafer (111), 2" dia x 0.275 mm, 1SP, P type, B doped R>1000 ohm-cm

MTI

Ga2O3 - Beta, Single Crystal Substrate, <-201> ori, 10x10x0.6mm, 1SP - GaO101006C1ori201US5

MTI

Ga2O3-- Powder > 4N Purity, 100 g - Powder-Ga2O3

MTI

Ga2O3-Beta Single Crystal Substrate, <-201> ori, 5x5x0.6mm, 1SP

MTI

Ga2O3-Beta Single Crystal Substrate, <010>+/-1 degree ori, 10x10x0.35mm, 2SP, Research grade with "Twin"

MTI

Ga2O3-beta Single Crystal Substrate, <010>+/-1 degree ori, 5 x 5 x 0.35mm, 2SP, Research grade with "Twin"

MTI

Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Fe-doped 10x10x0.5mm, 1SP

MTI

Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP

MTI

Ga:ZnO (0001) N+ type, Ga doped, 10x10x0.5mm, 1sp Zn face polished

MTI

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

MTI

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

MTI

GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp,

MTI

GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

MTI

GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp,

MTI

GaAs (111)A orientation, Semi-Insulating, undoped, 5x5x 0.5-0.55mm, 1sp,

MTI

GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp,

MTI

GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp

MTI

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

MTI

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP