Products

MTI

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP

MTI

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP

MTI

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 2SP - GAUa76D05C2US5

MTI

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut

MTI

GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp

MTI

GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US

MTI

GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5

MTI

GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp

MTI

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

MTI

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

MTI

GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

MTI

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

MTI

GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp

MTI

GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp

MTI

GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp

MTI

GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp

MTI

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

MTI

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US

FCS

Gadolinium Doped Ceria (10% Gd) - Mid Grade Powder

FCS

Gadolinium Doped Ceria (10% Gd) - Nanopowder