Products

FCS

Gadolinium Doped Ceria (10% Gd) - Premium Powder

FCS

Gadolinium Doped Ceria (10% Gd) - Tape Cast Grade Powder

FCS

Gadolinium Doped Ceria (20% Gd) - Mid Grade Powder

FCS

Gadolinium Doped Ceria (20% Gd) - Nanopowder

FCS

Gadolinium Doped Ceria (20% Gd) - Tape Cast Grade Powder

MTI

Gadolinium Doped Ceria (CGO) SOFC Electrolyte Powder, 500g/Pack - EQ-SOFC-CGO

MTI

GaN (0001) 10x10.5x0.35mm,1sp, Semi-insulating

MTI

GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating

MTI

GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp

MTI

GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished

MTI

GaN -Single Crystal Substrate (0001), 50.8mm x 0. 25 mm , N+ type, 2SP

MTI

GaN -Single Crystal Substrate (0001), 50.8mm x 0.25 mm , N+ type, 1SP

MTI

GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP

MTI

GaN -Single Crystal Substrate (0001), N type, 10x10x0.475 mm, 1SP - GaNC10100475S1NSUS5

MTI

GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

MTI

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP

MTI

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP

MTI

GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP

MTI

GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm

MTI

GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1sp