MTI  |  SKU: GATea50D0485C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

€228,85

Delivery and Shipping to EU

We will add in the quotation, the shipping, insurance, customs clearance costs.

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

MTI

  • GaAs single crystal wafer, PRIME Grade
  • Growing Method:          VGF
  • Orientation:                  (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size:                            2" dia x 0.485mm
  • Polishing:                     One  side polished
  • Doping:                        Te doped
  • Conductor type:            N-type
  • Carrier Concentration:    (0.1-0.6) x 10^18 /cm^3
  • Mobility:                       3500-3600 cm^2/V.S
  • Resistivity:                    (2.9-10.7) E-3 ohm-cm
  • EPD:                            <8000/cm^2
  • Note:                            EPI polishing: RMS < 5 Angstrom

Related Products

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coater

 RTP Furnaces
Back to top