Products

MTI

Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm

MTI

Si wafer (100), 3 "dia x 0.35 mm, 1sp, P type, B doped, resistivities:0.001-0.005ohm-cm

MTI

Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm

MTI

Si wafer (100), 3 "dia x0.35 mm, 2sp, N type, As-doped, R:0.001-0.005 ohm.cm

MTI

Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001

MTI

Si wafer (100), 3 "dia x0.38 mm, 1sp, N type, As-doped, R:0.001-0.005 ohm.cm

MTI

Si wafer (100), 3 "dia x0.381 mm, 1sp, N type, P-doped, R:5-10 ohm.cm - SIPa76D0381C1R5

MTI

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm

MTI

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1

MTI

Si wafer (100), 3 "dia x0.5 mm, 2sp, N type, Undoped, R>1000 ohm-cm - SIUa76D05C2R1000

MTI

Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, Sb doped, R:0.01-0.02 ohm.cm - SISba101D05C1R001

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >1,000 ohm-cm - SiUa101D05C1R1000