Products

MTI

Si Wafer (110), 2" dia x 0.5 mm, 2SP, N type, P doped R:0.05-0.5 ohm.cm

MTI

Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1

MTI

Si Wafer (110), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm)

MTI

Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

MTI

Si Wafer (111) 2" dia x 0.279 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D0279C1R1

MTI

Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

MTI

Si Wafer (111) 2" dia x 0.5 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D05C1R1

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, N type, As doped ,R:0.005-0.05 ohm.cm - SIAsc50D05C2R0005

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, N type, P doped ,R:0.005-0.05 ohm.cm

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1

MTI

Si Wafer (111) 2" dia x 0.5mm, 1SP, FZ, Undoped, R> 10,000 ohm-cm - SIUc50D05C1R10000

MTI

Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1

MTI

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

MTI

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:1-10 ohm-cm

MTI

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

MTI

Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000

MTI

Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001

MTI

Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm

MTI

Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, As- doped, R<0.005 ohm-cm - SIAsc50D0279C1

MTI

Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, P doped, R:1-10 ohm-cm - SIPc50D0279C1R1