Products

MTI

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

MTI

Si Wafer (111), 4 " dia x 0.4 mm, 1SP, N Type, undoped, FZ, R>5000 ohm-cm

MTI

Si Wafer (111), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>10,000 ohm-cm) - SIUc101D05C1R10000

MTI

Si Wafer (111), 4" dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SIUc101D05C1R1000

MTI

Si Wafer (111), 4"dia x 0.45 mm, 1SP, N Type (P doped), resistivity:0.4-0.6ohm-cm

MTI

Si Wafer (111), 4"dia x 0.5 mm, 1SP, N Type (undoped, FZ R>5000 ohm-cm)

MTI

Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

MTI

Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US

MTI

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm

MTI

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack

MTI

Si Wafer (111), Prime Grade, 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SiAsc101D05C1R0001

MTI

Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm

MTI

Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

MTI

Si3N4 Jar w/ SS Jacket for SFM-3 & SFM-3-II Milling Machines (80ml) - MJ3SN-80

MTI

Si3N4 Silicon Nitride Ceramic Substrate, 10 x 10 x 1.0 mm, One Side Polished - CmSi3N4101010S1

MTI

Si3N4 Silicon Nitride Ceramic Substrate, 20 x 20 x 1.0 mm, One Side Polished - CmSi3N4202010S1

MTI

SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US

MTI

SiC - 4H (0001), 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1

MTI

SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished

MTI

SiC - 4H (0001), 2" dia. x0.33 mm th., two sides polished - SC4Hz50D033C2US