Crystal Substrate A-Z

MTI

PMNT Substrate (011) 10x10x0.5mm, two sides polished - PMNTg101005S2

MTI

PMNT Substrate (011) 10x10x0.5mm, one side polished - PMNTg101005S1

MTI

PMNT Substrate (001) 5x5x0.5mm, One side polished -PMNTb050505S1

MTI

PMNT Substrate (001) 10x10x0.5mm, two sides polished - PMNTb101005S2

MTI

PMNT Substrate (001) 10x10x0.5mm, one side polished - PMNTb101005S1

MTI

YSZ (111) 8 mm dia x 0.5 mm, 2SP

MTI

YSZ (111) 5x5x0.5mm, 1SP - YSZc050505S1

MTI

YSZ (111) 10x10x1.0mm, 1SP - YSZc101010S1

MTI

YSZ (111) 10x10x0.5mm, 2SP - YSZc101005S2

MTI

YSZ (111) 10x10x0.5mm, 1SP - YSZc101005S1

MTI

YSZ (111) 1"x1"x0.5mm, 2SP

MTI

YSZ (111) 1"x1"x0.5mm, 1SP

MTI

YSZ (111) 0.5"x0.5"x0.5mm, 1SP - YSZc121205S1

MTI

W - Tungsten Polycrystalline Metallic Foil: 125 Width x 200 Length x 0.1mm thick - MF-W-Foil-200L

MTI

VGF-InAs (111)B, N type, undoped, 2" in dia x 0.5mm, 1sp

MTI

VGF-InAs (111)A, N type, undoped, 2" in dia x 0.5mm, 1sp

MTI

VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cm

MTI

VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

MTI

VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm

MTI

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm