Crystal Substrate A-Z

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InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished

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InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished

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InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished

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InSb (100) 10x10x 0.3 mm, N type, Te doped, 1 side polished

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InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US

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InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp

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InP-VGF Grown (111)B Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating

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InP-VGF Grown (111)A undoped, 2"x0.35 mm wafer, 1sp

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US

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InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp

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InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.35mm wafer, 1sp - IPZncA50D035C1US

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InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1sp

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InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp

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InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp

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InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US

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InAs, (100), Sn doped, N-type, 10m-10m x10mm x 0.5mm 1sp - IASna101005S1

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InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes

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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes

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InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp