Crystal Substrate A-Z

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CsPbBr3 single crystal substrate (100 ) 10x10x0.5mm, 1sp

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CsI Single crystal block 10x10x5.0 mm, fine ground - CSI101050SN

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CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 2sp

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CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type (Ga doped), resistivity: 0.001-0.01 ohm-cm - GEGaa50D05C2R0001US

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm - GEsba50D05C2R10US

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 0.01-0.1ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm

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Ge Wafer (100) 2" dia x 0.5 mm, 1SP, N type (Sb doped), resistivity:2.5-2.7ohm-cm - GESba50D05C1R2pt7BeUS

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Ge Wafer (100) 2" dia x 0.45 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

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Ge Wafer (100) +/-0.7 Degree 2" dia x 0.45 mm, 1SP, N type ( Sb doped), R:>40 ohm-cm

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Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm

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Ge Wafer (100) +/- 1 degree, 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

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Ge Wafer (100) +/- 0.7 degree 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm

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Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm

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Ge Substrate: (100)+/- 2 degree, 10x5 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

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Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

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Ge Substrate: (100)+/- 2 degree, 10x10 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm