Crystal Substrate A-Z

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

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GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp

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GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp,

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GaAs (111)A orientation, Semi-Insulating, undoped, 5x5x 0.5-0.55mm, 1sp,

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GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp,

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GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

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GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp,

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CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp - FmCeO2onYSZc101005S1FT40nm

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CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm - FmCeO2onYSZe101005S1FT40nm

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CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm - FmCeO2onYSZa101005S1FT40nm

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Ce:YAG ( 0.2% wt Ce doped)substrate (111) 10x10x 0.2 mm, 2sp - YAGCec101002S2

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Ce:YAG ( 0.2% wt Ce doped) substrate (111) 5 x 5 x 0.5 mm, 2sp - YAGCec050505S2

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Ce:YAG ( 0.2% wt Ce doped) substrate (111) 2" dia.x 0.5 mm, 1sp

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Ce:YAG ( 0.2% wt Ce doped) substrate (111) 10x10x 0.5 mm, 2sp - YAGCec101005S2

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Ce:Lu2SiO5 substrate (110 ) 10x10x0.5 mm, 1sp

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Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp - LSOCeb101005S1US

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CdZnTe (111) P type, 5x5x1.0mm 2sp

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CdZnTe (111) P type, 5x5x0.5mm 1sp

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CdZnTe (111) P type, 10x5x1.0mm 2sp