SiC (4H,6H,3C) Crystals

MTI

SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US

MTI

SiC - 4H (0001), 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1

MTI

SiC - 4H (0001), 2" dia. x0.3 mm th., One side polished

MTI

SiC - 4H (0001), 2" dia. x0.33 mm th., two sides polished - SC4Hz50D033C2US

MTI

SiC - 4H (0001), 5x5x0.3 mm , one side polished

MTI

SiC - 4H (0001), 5x5x0.33 mm , two sides polished

MTI

SiC - 4H (0001)with 4 degree of toward <11-20> /<10-10>, 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Deg4

MTI

SiC - 4H on axis <0001>+/- 0.5 degree 4" dia. x0.35 mm thick. Semi-Insulating two sides polished (Si side EPI- polished)-1

MTI

SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished

MTI

SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished

MTI

SiC - 6H (0001), 10x10x0.26 mm , two sides polished

MTI

SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

MTI

SiC - 6H (0001), 5x5x0.33 mm, 2 SP

MTI

4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um

MTI

4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US