Thin Films A-Z

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CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm,2sp - FmCeO2onYSZa101005S2FT40nm

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CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 2sp - FmCeO2onYSZc101005S2FT40nm

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1000 nm Silicon Nitride Film (LPCVD) on Si(100), P-type, B-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm

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300 nmSilicon Nitride Film (LPCVD) on Si(100), N-type, P-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm - FmSi3N4onSiPa100D0525C1FT300

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SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)

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Pt+Ti Film on Sapphire Wafer, 3" x 0.5mm, Pt-100nm + Ti-100nm

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Pt+Ti Film on Sapphire Wafer, 10x10x0.5, Pt-100nm+Ti-100nm

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Pt Film (100nm) on Sapphire Wafer, 3"x0.5mm, <0001>

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100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100

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1200C Max 6 Channel High Cleanliness Hydrogen Furnace for Hi-Throughput Annealing - GSL-1200X-MGI-6-H2

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100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%

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AlN Template on Sapphire(0001) 4"x 0.5mm, one sides polished ,AlN film: 1000nm - FmAlNonALc101D05C1FT1000US

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AlN Template on Sapphire(0001) 2"x 0.5mm, two sides polished, AlN film: 1000nm

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AlN Template on Sapphire(0001) 2"x 0.5mm, one sides polished, AlN film: 1000nm - FmAlNonALc50D05C1FT1000US

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AlN Ceramic Substrate 2"x2"x0.254mm, as lapped, CmAlN50500254SN

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AlN Template on Sapphire(0001) 4"x 0.5mm, one sides polished, AlN film: 5000nm - FmAlNonALc101D05C1FT5000US

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AlN Template on Sapphire(0001) 2"x 0.5mm, one sides polished ,AlN film: 5000nm - FmAlNonALc50D05C1FT5000US5

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AlN Template on 4" Silicon (Si <111>, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUS

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AlN Ceramic Substrate 114.3mm x114.3mm x 0.5mm, as lapped on both sides - CmAlN11411405SN

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AlN Ceramic Substrate 10x10x 0.5mm, 1SP - CmAlN101005S1