Thin Films A-Z

MTI

CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm - FmCeO2onYSZa101005S1FT40nm

MTI

Boron Nitride Film on Silicon Wafer, 24 nm / 4" -- BN-Si-100-24nm - FmBNonSia100D0525C1FT24nm

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Au(Gold)/Ti(Titanium) Coated Microscope Slides,Gold layer thickness: 50nm (+/- 5nm),Glass slide: 75 x 25x1.1mm, purity of Au: 4N5 - FmAu50Ti15onGlass752511

MTI

Au(Gold)/Ti(Titanium) Coated Microscope Slides,Gold layer thickness: 100nm,Glass slide: 75 x 25x1.1mm, purity of Au: 4N5 - FmAu100Ti15onGlass752511

MTI

Aluminum Film on Silicon Wafer, 3 microns / 4" -- Al-Si-100-3um, Si(100) N-type, R:1-20 ohm.cm - FmAlonSiPa101D0525C1FT3umR1

MTI

Aluminum Film on Silicon Wafer, 3 microns / 4" -- Al-Si-100-3um ,Si(100) N-type, R:<0.005 ohm.cm - FmAlonSiAsa101D0525C1FT3um

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Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm

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500nm-thick Mo-coated Sodalime Glass, 25 mm(L) x 25 mm(W) x 0.7 mm th - FmMoCoatedGlass252507FT500

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500nm-thick Mo-coated Sodalime Glass, 20 mm(L) x 15 mm(W) x 0.7 mm th - Mo-coated Glass-201507

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500nm-thick Mo-coated Sodalime Glass, 100 mm(L) x 100 mm(W) x 1.1 mm thk

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4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um

MTI

4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US

MTI

4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US

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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm

MTI

2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm