mti

MTI

Si (100) 10x10x0.5mm, 1SP, P type B doped, R:1-10 ohm-cm

MTI

Si (100) 10x10x0.5mm, 2SP, N type P doped, R: 5-10.3 ohm-cm

MTI

Si (100) 10x10x0.5mm, 2SP, N type undoped, R >1000 ohm-cm - SiUa101005S2R1000

MTI

Si (100) 10x10x0.5mm, 2SP, P type B doped, R: 1-32 ohm-cm

MTI

Si (100) 5x5x0.5mm, 1SP, N-type undoped, R >1000 ohm-cm

MTI

Si (100) 5x5x0.5mm, 1SP, P-type B-doped, R: 1-10 ohm-cm

MTI

Si (110) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUe101005S1R1000

MTI

Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm

MTI

Si (111) 10mm dia x 0.35 mm, 1SP, N type undoped, R >1000 ohm-cm

MTI

Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000

MTI

Si (111) 10x10x0.5mm, 1SP, P-type B-doped, R:1-10 ohm-cm

MTI

Si (111) 10x10x0.5mm, 2SP, N-type undoped, R >1000 ohm-cm

MTI

Si (111) 10x10x0.5mm, 2SP, P type undoped, R>1000 ohm-cm

MTI

Si (111) 5x5x0.5mm, 1SP, N-type undoped, R >1000 ohm-cm

MTI

Si (510)wafer = Si (100) with 11.3 degree miscut towards <100>/<110> , 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUa510ori101D05C1

MTI

Si single crystal for evaporation, purity >99.999%, 5x5x5 mm as cut - Si050550SN

MTI

Si Single Crystal Substrate, Undoped (100), 2"diax 1.0mm 1sp, R>10000 ohm.cm - SiUa50D10C1R10000

MTI

Si Wafer (100) 2" dia x 0.3 mm, 2SP, FZ , Undoped, resistivities: > 10,000 ohm-cm

MTI

Si Wafer (100) 2" dia x 0.5 mm t, 1SP, FZ Undoped, resistivities: > 1000 ohm-cm - SIUa50D05C1R1000

MTI

Si Wafer (100) 2" dia x 0.5 mm, 1SP, FZ , Undoped, resistivities: > 5000 ohm-cm