mti

MTI

Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

MTI

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm

MTI

Si Wafer (100) N type, undoped, 2" dia x 0.5mm, 2SP, FZ, Undoped , R>1000 ohm-cm - SiUa50D05C2R1000

MTI

Si Wafer (100), 1" dia x 0.5mm, 1sp, P type, B-doped, R:0.1-1.0 ohm-cm - SiBa25D05C1R01

MTI

Si Wafer (100), 2" dia x 0.1 mm, 1SP, P type, B doped, R:5-20 ohm.cm - SIBa50D01C1

MTI

Si Wafer (100), 2" dia x 0.275 mm, 1SP, P type, B doped, R: 0.2-0.4 ohm-cm - SIBa50D0275C1R02

MTI

Si Wafer (100), 2" dia x 0.3 mm, 1SP, N type, As doped R<=0.005 ohm.cm

MTI

Si Wafer (100), 2" dia x 0.5 mm, 1SP, N type, As doped R<=0.005 ohm.cm - SIAsa50D05C1R0005

MTI

Si Wafer (100), 2" dia x 0.5mm, 1SP, P type B doped, R:1-10 ohm.cm

MTI

Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm

MTI

Si wafer (100), 3 "dia x 0.35 mm, 1sp, P type, B doped, resistivities:0.001-0.005ohm-cm

MTI

Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm

MTI

Si wafer (100), 3 "dia x0.35 mm, 2sp, N type, As-doped, R:0.001-0.005 ohm.cm

MTI

Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001

MTI

Si wafer (100), 3 "dia x0.38 mm, 1sp, N type, As-doped, R:0.001-0.005 ohm.cm

MTI

Si wafer (100), 3 "dia x0.381 mm, 1sp, N type, P-doped, R:5-10 ohm.cm - SIPa76D0381C1R5

MTI

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm

MTI

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1

MTI

Si wafer (100), 3 "dia x0.5 mm, 2sp, N type, Undoped, R>1000 ohm-cm - SIUa76D05C2R1000

MTI

Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm