MTI

MTI

Vanadium Foil (V) Foil: 0.25mm t x50 mm W x 100 mm L - MF-V-Foil-100L-0.25T

MTI

Vanadium Redox Flow Cell (Single Split Unit) for Battery R&D - EQ-VRB-C-LD

MTI

Vertical 1700C Vacuum and Atmosphere Tube Furnace with 80mm Alumina Tube - GSL-1700X-VT-UL

MTI

Vertical Double Side R2R Coater w/ Max. 250mm Width For Battery Electrodes-MSK-AFA-DS300-LD

MTI

Vertical Pyrolysis Furnace 1500 Max. for Synthesis Nanoparticles - OTF-1500X-VT-III-PGEP

MTI

Vertical Tube Furnace for Testing Small Fuel Cell (D20 mm Cell, 1000°C) - OTF-1200X-S-VT-C4

MTI

VGF -InP (100) undoped 5x5x0.35mm,1sp

MTI

VGF InP (100) Fe doped, 2"x0.35 mm wafer, 1sp - IPFea50D035C1US

MTI

VGF InP (100) undoped, 2" x 0.35 mm wafer, 1sp - IPUa50D035C1US

MTI

VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US

MTI

VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp

MTI

VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp

MTI

VGF InP (110) Fe doped, 2"x0.5 mm wafer, 2sp

MTI

VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

MTI

VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp

MTI

VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

MTI

VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp

MTI

VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm

MTI

VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm

MTI

VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US