MTI

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VGF InP (100) Fe doped, 2"x0.35 mm wafer, 1sp - IPFea50D035C1US

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VGF InP (100) undoped, 2" x 0.35 mm wafer, 1sp - IPUa50D035C1US

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VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US

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VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp

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VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp

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VGF InP (110) Fe doped, 2"x0.5 mm wafer, 2sp

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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

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VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp

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VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp

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VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp

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VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm

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VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm

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VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US

MTI

VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)

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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm

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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

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VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm

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VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

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VGF-Ge Wafer(100), 100mm dia x 0.4 mm, 2SP, P type (Ga doped), R:0.0038-0.0158 Ohm.cm