MTI

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

MTI

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

MTI

GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp,

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GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

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GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp,

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GaAs (111)A orientation, Semi-Insulating, undoped, 5x5x 0.5-0.55mm, 1sp,

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GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp,

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GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x5 x0.5 mm, 2SP

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GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3

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GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 sp

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GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 2sp

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GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp

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GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp