MTI  |  SKU: GAUe100D05C1US5

GaAs VGF Grown (110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, 1sp

€402,44

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GaAs VGF Grown (110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, 1sp

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 100mm  dia x 0.5mm 
  • Polishing: One  side  polished
  • Doping: Un-doped
  • Conductor type:S-I
  • Carrier Concentration: N/A
  • Mobility:  5260-6180cm^2/V.S
  • Resistivity : (1.05-3.03)x10^8ohm.cm
  • Ra(Average Roughness) : < 0.4 nm
  • EPI ready surface and packing


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