mti

MTI

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp

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GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp

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GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp

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GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US

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Gadolinium Doped Ceria (CGO) SOFC Electrolyte Powder, 500g/Pack - EQ-SOFC-CGO

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GaN (0001) 10x10.5x0.35mm,1sp, Semi-insulating

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GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating

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GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp

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GaN ,N-type ,Si doped (0001) 10x10.5x0.35mm,1sp- Ga-face polished

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GaN -Single Crystal Substrate (0001), 50.8mm x 0. 25 mm , N+ type, 2SP

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GaN -Single Crystal Substrate (0001), 50.8mm x 0.25 mm , N+ type, 1SP

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GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP

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GaN -Single Crystal Substrate (0001), N type, 10x10x0.475 mm, 1SP - GaNC10100475S1NSUS5

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GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

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GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP