mti

MTI

GaN -Single Crystal Substrate (0001), N type, 10x10x0.475 mm, 1SP - GaNC10100475S1NSUS5

MTI

GaN -Single Crystal Substrate (0001), Semi-Insulating, 10x10x0.475 mm, 1SP, Production Grade - GaNC10100475S1SemiBUS5

MTI

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.3 mm , 2SP

MTI

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP

MTI

GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP

MTI

GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm

MTI

GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.279 mm, 1sp

MTI

GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron

MTI

GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um

MTI

GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade

MTI

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um

MTI

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film:4- 5um

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GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um

MTI

GaN Template on Sapphire, C plane,10x10 x0.5 mm , Film: 30 micron Thick

MTI

GaP crystal for evaporation, purity >99.995%, 5x5x5 mm as cut - GaP050550SN

MTI

GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating

MTI

GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp

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GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2

MTI

GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

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GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp