MTI  |  SKU: ALM25D05C2

Al2O3-Sapphire Wafer, M-plane, 1"Dia x 0.5 mm, 2SP - ALM25D05C2

€149,44

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Al2O3-Sapphire Wafer, M-plane, 1"Dia x 0.5 mm, 2SP - ALM25D05C2

MTI

Specifications:

  • Orientation:  M <10-10> +/-0.5 o
  • Wafer size:  2" dia x 0.4 - 0.5 mm thickness
  • Polished surface: Two sidesEPI polished via a special CMP procedure.  Ra <5A
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container 

 

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 ( mohs)
  • Thermal Expansion: 7.5x10-6 (/ oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis,  <5 x10-5  at C axis

 

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