MTI  |  SKU: FmCu100Ta20onSiBa100505S1R1

Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp

€34,44

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Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp

MTI

Specifications:

  • Cu coated Si Wafer ( 10x5 mm size )
  • Thickness of highly oriented polycrystalline Cu <111> film: 100 nm
  • Thickness of Ta diffusion barrier: 20-50 nm
  • 10x5x 0.5 mm thickness Si wafer (Prime Grade)
  • P type, B doped, <100> orientation, SSP
  • Resistivities: 1-20 ohm-cm
  • Surface Roughness:   as grown ,  RA < 10 nm
  • Package: One 1000 class clean room with 100 class plastic bag
  • 10 pcs per package for minimum order
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