MTI  |  SKU: FmCu100Ta50SO300onSiBa101D05

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

€457,70

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

MTI

Specifications:

  • Cu coated SiO2/Si  Wafer (4 inch size)
  • Thickness of Cu polycrystalline <111> film: 100 nm
  • Thickness of Ta diffusion barrier: 50 nm
  • 4 inch dia SiO2/ Si wafer (Prime Grade)
    • P type, B doped, <100> orientation, Singe side polished
    • Resistivities: 1-20 ohm-cm
    •  thermal oxide: 300 nm thickness
  • Surface Roughness: as grown
  • Package: One 1000 class clean room with 100 class plastic bag



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