MTI  |  SKU: FmCu400Ta50SO300onSiBa101D05

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

€457,70

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

MTI

Specifications:

  • Cu <111> coated Si Wafer (4 inch size)
  • Thickness of highly oriented polycrystalline Cu <111> film: 400 nm
  • Thickness of Ta diffusion barrier: 50 nm
  • 4 inch dia x0.525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk
  • P type, B doped, <100> orientation, SSP
  • Resistivities: 1-20 ohm-cm
  • Surface Roughness:   as grown , N/A
  • Package: One 1000 class clean room with 100 class plastic bag


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