MTI  |  SKU: FmCu400Ta50SO300onSiBa101005

Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp

€44,85

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Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp

MTI

Specifications:

  • Cu coated SiO2/Si  Wafer (  10x10 mm size)
  • Thickness of   polycrystalline Cu <111> film: 400 nm
  • Thickness of Ta diffusion barrier: 50 nm
  • 10x10x0.5 mm    Si wafer (Prime Grade)
    • P type, B doped, <100> orientation, SSP
    • Resistivities: 1-20 ohm-cm
    •  thermal oxide: 300 nm
  • Surface Roughness: as grown
  • Package: One 1000 class clean room with 100 class plastic bag
  • 10 pcs per package for minimum order



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