MTI  |  SKU: FmGaNSionALc50D15C1US

FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US

€684,25

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FLAAT GaN (0001) Template( N+ ,Si-doped) on Sapphire N+ , 2"x 15um,1sp - FmGaNSionALc50D15C1US

MTI

  • Research Grade , about 90 % usable  area
  • GaN template, N+, 2” in diameter
  • FLAAT (Flat Layers At All Temperatures) GaN Template  ( ALN buffer )
  • FLAAT Gallium Nitride Template, N+ (Si-doped)
  • 2” in diameter, Si-doped 
  • Polarity: Ga-face
  • Carrier Concentration: > 1E18/cm^3
  • Nominal GaN Thickness: 15 um +/- 10 %
  • Front side surface(after deposition and polish): Epi-ready with, 
  • Ra< 0.5 nm RMS (data obtained via using a white light interferometer )
  • Back side surface: Substrate as received
  • Substrate: Sapphire, 2”, c-plane 0.20 deg offcut towards m-plane
  • SSP, 430 um
  • Backside: substrate as received 
 Clcik below pic to see FLAAT structure

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