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MTI | SKU:
GASie100503S2US
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp
Regular price
€63,19
Unit price
Delivery and Shipping to EU
Delivery and Shipping to EU
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GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp
MTI
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 10 x 5 x 0.35 mm
- Polishing: Two sides polished
- Doping: Si-doped
- Conductor type: S-C-N
- Carrier Concentration: (2.4-3.27)x10E18/cm^3
- Mobility: 1630-1870 cm^2/V.S
- Resistivity :( 1.17-1.4)x10^-3 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
- Note: EPI ready wafers
