MTI  |  SKU: GASie101003S2US

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

€103,44

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 10 x 10 x 0.3-0.35 mm 
  • Polishing: Two  sides polished
  • Doping: Si-doped
  • Conductor type: S-C-N
  • Carrier Concentration:(2.49-3.27)x10^18/c.c 
  • Mobility:  1630- 1870cm^2/V.S
  • Resistivity :( 1.17-1.4)x10^-3 ohm.cm
  • Ra(Average Roughness) : < 0.4 nm



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