MTI  |  SKU: GAUe202005S1US

GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp

€228,85

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GaAs, VGF Grown (110) ori. un-doped, Semi-Insulating, 20x20x0.5mm, 1sp

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 20x20x0.5mm 
  • Polishing: One  side polished
  • Doping: un-doped
  • Conductor type: S-I
  • Mobility:  3990-5030 cm^2/V.S
  • Resistivity :( 2.5-5.1)x10^8 ohm.cm
  • Ra(Average Roughness) : < 0.4 nm
  • Note:  EPI ready wafers


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