MTI  |  SKU: GAUa50D05C2US5

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP

€343,85

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GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP

MTI

  • GaAs single crystal wafer
  • Growing Method:               VGF
  • Orientation:                       (100)+/- 0.5 degree
  • Size:                                 2" dia x 0.5mm
  • Polishing:                          Double sides  polished
  • Doping:                             un- doped
  • Conductor type:                 Semi-insulating
  • Ra(Average Roughness) :   < 0.4 nm
  • Mobility:                          4890--6180 cm^2/V.S
  • Resistivity:                        (0.76-4.40)x10^8 ohm.cm
  • EPD:                                <5000cm^2
  • EPI ready surface and packing  


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