Ge Single crystal substrate, N-type Undoped (100) +/-2.5 Degree, 10x10x0.5mm, 1sp, R: >50 ohm.cm

Specifications

• Growing Method:           CZ
• Wafer Size:                    10x10x0.5 mm
• Surface Polishing:          one side epi polished
• Orientation:                     (100)+/-2.5 Degree
• Surface roughness:         RMS or Ra:~ 10 A(By AFM)
• Doping:                           Undoped
• Conductor type:              N-type
• Resistivity:                      >  50 Ohms/cm  (If you would like to measure the resistivity accurately,
                                       please order our Portable 4 Probe Resistivity Testing Instrument.)                  
• Package:                        under 1000 class clean room  in wafer container     
  
  

  Related Product
  
  

  Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater