Ge Single crystal substrate ,N-type Undoped (111)ori. 5x5x0.5mm 2sp,R>50 ohm.cm

Specifications

• Growing Method:             CZ
• Wafer Size:                  5x5x0.5 mm
• Surface Polishing:          two sides epi polished
• Orientation:                   (111)
• Surface roughness:        < 8 A ( by AFM)
• Doping:                         Undoped
• Conductor type:             N-type
• Resistivity:                     >50 Ohms/cm
• EPD:                             N/A
• Package:                       under 1000 class clean room  in wafer container     
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