Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (111) +/-0.5 Deg.
• Wafer Size:                      4" dia x   500 microns  
• Surface Polishing:             One side epi polished
• Surface roughness:           < 30 A ( by AFM)
• Doping:                            Un- Doped
• Conductor type:                N-type
• Resistivity:                       >50 Ohms/cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                          under 1000 class clean room        

Typical Properties:

• Structure:                         Cubic, a = 5.6754Å
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640

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