MTI  |  SKU: ISGea1010045S1

InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished

€228,85

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InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished

MTI

10x10x0.45 mm  InSb  wafer   (P type, Ge doped)

  •  Size:                      10x10x0.45 mm
  • Orientation            <100> +/-0.5o  with two reference flats
  •  Polishing:            one
    side polishd ( back side etched )
  • Packing:               Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5o
  • Orientation Flat                                                                
  • Doping                                                                Ge ndoped
  • Conductivity type                                               P type
  • Carrier Concentration                                     (0.05- 0.50)E17@77K



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