InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished

10x10x0.45 mm  InSb  wafer   (P type, Ge doped)

•  Size:                      10x10x0.45 mm
• Orientation            <100> +/-0.5^o  with two reference flats
•  Polishing:            two sides polishd  
• Packing:               Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 ^o
  • Orientation Flat                                                 N/A                         
  • Doping                                                                Ge
  • Conductivity type                                               P Type
  • Carrier Concentration                                     1.35x10^15/cc @77K
  • Mobility                                                               6300  cm²/Vs
  • EPD                                                                    <=200  / cm ²
  • Resistivity:                                          7.34E-1  ohm.cm