InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US

2" InSb  wafer   (N type, Te Doped )

• Size:                      2" dia x 0.45 (+/- 0.025 ) mm  thick
• Orientation:         <100> +/-0.5 ^o
•  Polishing:            one side  polishd
• Packing:               Sealed in nitrogen in single wafer container  at 100 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5 ^o
• Orientation Flat                                                 Two reference flates at    <100>                
• Doping                                                               Te
• Conductivity type                                               N type
  
• Carrier Concentration (@77 K)                     (0.19-0.50)E18/cc @77K
  Resistivities (ohm-cm):                       0.0005-0.001 
  Mobility (cm^2/Vs) (@77K):                 ( 3.58-5.60 )E +4  
  EPD ( / cm^2)                                     < 200