MTI  |  SKU: ISTea50D05C2US

InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished

€1.897,50

Delivery and Shipping to EU

We will add in the quotation, the shipping, insurance, customs clearance costs.

InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished

MTI

2" InSb  wafer   (N type, Te Doped )

  • Size:                      2" dia x 0.5 (+/- 0.025 ) mm  thick
  • Orientation:         <100> +/-0.5 o
  •  Polishing:            two sides  polishd
  • Packing:               Sealed in nitrogen in single wafer container  at 100 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 Two reference flates at    <100>                
  • Doping                                                               Te
  • Conductivity type                                               N type
  • Carrier Concentration (@77 K)                     (2-6)E17/cc @77K

    Mobility (cm^2/Vs) (@77K):                    3.9E 4  
    EPD ( / cm^2)                                          < 200                    

 


Back to top