MTI  |  SKU: ISUa50D05C1US

InSb (100) 2" dia x 0.5 mm, Undoped, N type, 1 side polished - ISUa50D05C1US

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InSb (100) 2" dia x 0.5 mm, Undoped, N type, 1 side polished - ISUa50D05C1US

MTI

2" InSb  wafer   (N type, undoped)

  •  Size:                      2" dia x 0.5mm  thick
  • Orientation            <100> +/-0.5o  with two reference flats
  •  Polishing:             one-side side polishd ( back side etched )
  • Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5o
  • Orientation Flat                                                 <110>.<110>                 
  • Doping                                                                Undoped
  • Conductivity type                                               N type
  • Carrier Concentration                                    <1E15@77K  
  • Mobility                                                               >4E5 cm^2/ v.s
  • EPD                                                                   <300cm^-2

 

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